Temperature dependence of threshold current of GaAs quantum well lasers

27 May 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (11) , 451-453
https://doi.org/10.1049/el:19820307

Abstract

The radiative recombination rate in a quantum well structure is calculated using a constant density of states and the k-selection rule. This calculation shows that the threshold current of a GaAs quantum well laser has low temperature sensitivity (T₀ ̃ 330 K for T > 300 K).

Keywords

K-SELECTION RULE
TEMPERATURE DEPENDENCE
SEMICONDUCTOR LASER
GAAS QUANTUM WELL LASERS
THRESHOLD CURRENT
CONSTANT DENSITY OF STATES
RADIATIVE RECOMBINATION RATE

This publication has 2 references indexed in Scilit:

HETEROSTRUCTURE MATERIALS
Published by Elsevier ,1978
Quantum Mechanics
Physics Today, 1970