Growth of a ZnSe-ZnTe strained-layer superlattice on an InP substrate by molecular beam epitaxy
- 27 January 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (4) , 296-297
- https://doi.org/10.1063/1.96585
Abstract
A ZnSe-ZnTe strained-layer superlattice (SLS) was grown on an InP substrate by molecular beam epitaxy for the first time. The x-ray diffraction measurement technique was used to confirm the existence of the high quality SLS structure. Overall quality may also be inferred from the observed quantum size effects of the photoluminescence data.Keywords
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