Amorphous silicon bulk barrier phototransistor with Schottky barrier emitter
- 1 July 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (1) , 49-51
- https://doi.org/10.1063/1.96399
Abstract
An amorphous silicon indium tin oxide/n+‐i‐δ( p+)i/Al Schottky barrier phototransistor was fabricated on a glass substrate, where δ( p+) is the thin (200 Å) p+ base. The operation of the transistor is similar to that of an n+‐i‐δ( p+)i‐n+ amorphous silicon bulk barrier phototransistor. Photogenerated holes are accumulated at the thin base region (barrier valley) and induce a large number of electrons injected from the Schottky barrier due to the hole induced barrier lowering. Varying the emitter and collector i‐layer thickness produced different current gains in which a maximum value of 5.6 is obtained for the 300‐Å emitter i‐layer/p+/3000‐Å collector i‐layer structure under an input red light intensity of 7.5 mW/cm2.Keywords
This publication has 3 references indexed in Scilit:
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- Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cellsIEEE Transactions on Electron Devices, 1980