Fast neutron tolerance of GaAs JFET's operating in the hot electron range

1 August 1972

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 19 (8) , 993-995
https://doi.org/10.1109/T-ED.1972.17532

Abstract

Carrier removal and mobility degradation in epitaxially grown n-type GaAs, due to exposure to fast neutrons, is reported. The variations in carrier concentrations and mobilities are utilized to predict the transconductance degradation of GaAs JFET's as a function of neutron fluence. Experimental results up to a fluence of8 \times 10^{15}n/cm2are reported and correlated with theory.

Keywords

GALLIUM ARSENIDE
NEUTRONS
CHROMIUM
ELECTRON MOBILITY
DEGRADATION
IMPEDANCE