Electron-beam-induced current investigations of oxygen precipitates in silicon
- 1 August 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (3) , 1407-1409
- https://doi.org/10.1063/1.336091
Abstract
The electron-beam-induced current contrast from oxygen-induced defects in Czochralski silicon is studied. It is shown that positive and negative contrasts from individual defects can appear. In some cases a reversal of the contrast’s sign is observed when one changes the observation conditions (electron beam current, accelerating voltage).This publication has 3 references indexed in Scilit:
- Charge collection scanning electron microscopyJournal of Applied Physics, 1982
- The electrical properties of stacking faults and precipitates in heat-treated dislocation-free Czochralski siliconApplied Physics Letters, 1977
- SEM observation of dopant striae in siliconJournal of Applied Physics, 1977