Studies of aluminum Schottky barrier gate annealing on GaAs FET structures
- 1 April 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (4) , 677-684
- https://doi.org/10.1016/0038-1101(78)90336-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Low-temperature interdiffusion between aluminum thin films and GaAsJournal of Applied Physics, 1976
- Thermal aging of Al thin films on GaAsJournal of Vacuum Science and Technology, 1976
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966