Optical functions of silicon at elevated temperatures
- 15 September 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (6) , 3758-3761
- https://doi.org/10.1063/1.357378
Abstract
The optical functions of silicon have been measured accurately at elevated temperatures using the two‐channel spectroscopic polarization modulation ellipsometer. The wavelength region covered is 240–840 nm (5.16–1.47 eV), and the temperature region covered is room temperature to 490 °C. Using this data, the refractive index n and the extinction coefficient k are both parameterized as functions of temperature T and photon energy E for photon energies below the direct band edge of silicon (∼3.36 eV or 370 nm). In this range, n(E,T) can be fit with five parameters, and k(E,T) can be fit with six parameters.This publication has 13 references indexed in Scilit:
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