Implantation-induced strains in silicon studied by X-ray interferometry and topography

1 January 1978

journal article
research article
Published by Taylor & Francis in Philosophical Magazine A

Vol. 37 (1) , 95-106
https://doi.org/10.1080/01418617808239164

Abstract

The dose dependence and annealing of lateral strains induced by 80 keV argon implants in silicon have been studied by X-ray interferometry and X-ray diffraction topography in the range 10¹⁴-10¹⁷ ions/cm² and 20–900°C, respectively. Volume expansion has been observed in the as-implanted state, but for bombardment to doses much larger than that required to produce an amorphous layer, an essentially stress-free state is obtained. Annealing at 600°C results in a stress-free state for all doses considered. Samples implanted up to doses required to form an amorphous layer, and slightly higher, show a rapid reverse-annealing above 600°C, accompanied by a reversal of sign of the strain.

Keywords

This publication has 22 references indexed in Scilit:

Dose dependence of residual lattice disorder in ion-implanted and annealed silicon
Applied Physics Letters, 1977
Particularities of crystalline to amorphous state conversion in silicon heavily damaged by 140 keV Si++ ions
Physica Status Solidi (a), 1976
Disorder produced by high-dose implantation in Si
Applied Physics Letters, 1976
Changes of X-ray topographic contrast due to annealing of boron-implanted silicon
Physica Status Solidi (a), 1976
Direct observations of defects in implanted and postannealed silicon wafers
Applied Physics Letters, 1976
Neutron and X-ray diffraction investigations of silicon implanted by phosphorus ions
Physica Status Solidi (a), 1975
X-ray study of lateral strains in ion-implanted silicon
The European Physical Journal A, 1973
SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE
Applied Physics Letters, 1971
A study of strains in abraded diamond surfaces
Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967
AN X-RAY INTERFEROMETER
Applied Physics Letters, 1965