Humidity sensitive MIS structure

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Abstract
A solid-state humidity sensor based on the use of a hygroscopic aluminium oxide dielectric has been developed in two basic forms: an MIS (metal-insulator-silicon) capacitor and an MIS field-effect transistor. Anodisation of aluminium is used for the dielectric. Fabrication methods and results for the capacitor devices are reported. Response is typically within 12 s with +or-5% hysteresis. Batch reproducibility is generally within 5%.

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