Low-energy elastic scattering of electrons by bound silicon and germanium atoms

Abstract
Elastic differential and total cross sections were computed for 10 eV to 1 keV electrons scattered from bound silicon and germanium atoms using the method of partial waves. The effects of including combinations of static, polarization, and exchange potentials in the optical potential for partial wave analysis were investigated. A parameterization of our total cross section results is also provided in terms of the screened Rutherford cross section.