Analysis of the Transient Response of a Semiconductor‐Electrolyte Circuit to a Short Light Pulse: Application to CdSe Electrodes

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Abstract
A model to describe the transient response to a short light pulse of a circuit containing a semiconductor‐electrolyte interface is presented. It is applicable to the case where charge separation across the depletion layer is fast compared to other processes. Rate constants for charge transfer and carrier recombination at the interface are introduced in the model, and the conditions necessary for measuring these are discussed. Experimental results using 10 ns light pulses on electrodes are used to demonstrate the validity of the model for properly prepared electrodes and to illustrate the role of semiconductor defects in masking interface reactions in improperly prepared electrodes.

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