Passivity during the Oxidation of Silicon at Elevated Temperatures
- 1 September 1958
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 29 (9) , 1295-1297
- https://doi.org/10.1063/1.1723429
Abstract
The dependence of the rate of the oxidation of silicon in oxygen-helium mixtures on gas composition at 1410°C is discussed theoretically. At low oxygen contents of the gas, no layer of solid silica is expected to occur and the rate of attack due to formation of volatile SiO is supposed to be proportional to the oxygen partial pressure in the bulk gas. Above a critical oxygen partial pressure, solid silica may be formed and the rate of attack under steady-state conditions may drop by several powers of ten.This publication has 3 references indexed in Scilit:
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957
- Differential thermal analysis of the Si-Sio2 systemJournal of Physics and Chemistry of Solids, 1957
- Die Siliciummonoxyd‐Drucke über den festen Bodenkörpern Silicium und Siliciumdioxyd Mit 7 AbbildungenZeitschrift für anorganische und allgemeine Chemie, 1950