Lattice recovery of oxygen-implanted YBa2Cu3O7−δ superconductor
- 9 July 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (2) , 189-191
- https://doi.org/10.1063/1.104214
Abstract
The regrowth of an oxygen‐implanted YBa2Cu3O7−δ thin film was studied by Rutherford backscattering, ion channeling, and x‐ray diffraction studies. The atomic composition of the thin film was preserved even after a 1 h anneal at 990 °C, reflecting the high chemical stability of the material obtained by the pulsed laser deposition technique. Two distinct activation energies were determined during the regrowth process: 0.42±0.04 eV at lower temperatures, corresponding to epitaxial growth from the interface, and 0.18±0.03 eV at higher temperatures, presumably associated with homogeneous nucleation and reorientation.Keywords
This publication has 5 references indexed in Scilit:
- Implantation, damage, and regrowth of high Tc superconductorsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Crystalline perfection of as-deposited high-superconducting thin-film surfaces: ion channeling and x-ray photoelectron spectroscopy studyPhysical Review B, 1988
- Ion implantation and thermal annealing of single crystals of the type YBa2Cu3OxMaterials Letters, 1988
- Ion-channeling study of single-crystal YBa_{2}Cu_{3}O_{x}Physical Review B, 1988
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985