Bulk moduli of GaInAsP and GaInAs by photoluminescence up to 100 kbar
- 1 April 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (4) , 239-240
- https://doi.org/10.1088/0268-1242/4/4/012
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The hydrostatic pressure dependence of the band-edge photoluminescence of GaInAsSolid State Communications, 1988
- A determination of the relative bulk moduli of GaInAsP and InPPhilosophical Magazine Letters, 1988
- Analytic relation between bulk moduli and lattice constantsPhysical Review B, 1987
- Elastic Properties of Diamond-Type SemiconductorsJournal of Applied Physics, 1962