A MOSFET with Si-implanted gate-SiO2 structure for analog-storage EEPROm applications
- 1 October 1994
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (10) , 1771-1774
- https://doi.org/10.1016/0038-1101(94)90227-5
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- EEPROM as an analog storage device, with particular applications in neutral networksIEEE Transactions on Electron Devices, 1992
- IVB-2 memory effect and enhanced conductivity in Si-implanted thermally grown SiO2IEEE Transactions on Electron Devices, 1987