A new mobility-field expression for the calculation of MOSFET characteristics
- 31 July 1976
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (7) , 656-657
- https://doi.org/10.1016/0038-1101(76)90067-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Normalized characteristic of saturated high-field MOSFET'sSolid-State Electronics, 1974
- A two-dimensional numerical FET model for DC, AC, and large-signal analysisIEEE Transactions on Electron Devices, 1973
- Drift-Velocity Saturation of Holes in Si Inversion LayersJournal of the Physics Society Japan, 1971
- Hot Electrons in Germanium and Ohm's LawBell System Technical Journal, 1951