Bi2S3 as a high Z material for γ-ray detectors
- 1 February 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 22 (1) , 246-250
- https://doi.org/10.1109/tns.1975.4327646
Abstract
The semiconductor Bi2S3 has a bandgap of 1.3 eV and reported mobilities of 200 cm2/V for holes and 1100 cm2/V for electrons. Its absorption cross section is 1.8 times that of Hg I2. We report compensation of this material to 107 to 109 Ω-cm and initial results on γ-ray detection properties.Keywords
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