Deposition rate effects on amorphous silicon solar cell stability
- 1 January 1987
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 157 (1) , 158-164
- https://doi.org/10.1063/1.36483
Abstract
Single junction p‐i‐n a‐Si solar cells with 6000 Å and 4000 Å intrisic layer thicknesses, deposited at rates of 2 Å s− 1 to 8 Å s− 1 were fabricated and their light‐induced degradation was examined. Acceptable efficiencies after final light‐induced degradation can be achieved in solar cells with thin (<4000 Å) intrinsic layer deposited at least up to 6 Å s− 1.Keywords
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