Superconducting Origin of Spikes in the Differential Conductance of p-n and Point Contact Tunnel Junctions

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Abstract
Structure consisting of pairs of negative‐going spikes in differential conductance vs bias voltage are reported for GaAs p‐n junctions and for superconducting point contacts against a variety of conductors, including semiconductors. The spike pairs are symmetrically positioned about zero bias as in the previous observations of such structure by Shewchun and Williams and by Esaki and Stiles. Superconductivity is demonstrated to be essential to the phenomenon. A detailed model is discussed involving Josephson tunneling between microscopic particles within the semiconductor or point contact tunneling region. Temperature and low magnetic field data (H < 3 kOe) are in excellent agreement with the model while at higher fields the full interference pattern expected of a Josephson junction is not observed.

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