Characterization of Na + ‐Sensitive Electrolyte/Oxide/Semiconductor Structures Obtained by Ion Implantation
- 1 April 1996
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 143 (4) , 1422-1426
- https://doi.org/10.1149/1.1836654
Abstract
The possibility of obtaining sodium‐sensitive electrolyte/oxide/semiconductor structures by low‐energy implantation of and ions directly into a silica insulator is shown. The depth profiles of the ions are experimentally determined after chemical etching, using spectroscopic ellipsometry and x‐ray photoelectron spectroscopy. It is shown that the narrow depth profile (40 nm) is not perturbed by thermal annealing. The optimum ion fluence needed to obtain a quasi‐ Nemstian response to sodium is 2 × 1016 ions , which corresponds to 15% sodium aluminosilicate at the surface of the implanted silica insulator. Low selectivity coefficients (0.02 and 0.15) are obtained for the interfering ions and . The sensitivity of the implanted electrolyte/oxide/semiconductor structures is still stable after testing for an entire year.Keywords
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