On the determination of the threshold energy for atomic displacement in semiconductors

1 January 1980

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 50 (1) , 15-17
https://doi.org/10.1080/01422447908226497

Abstract

The assumption made when the threshold energy is measured using secondary defect production is discussed and shown to lead to a value higher than the exact one.

Keywords

SEMICONDUCTORS
THRESHOLD ENERGY
SECONDARY DEFECT
ATOMIC DISPLACEMENT
DEFECT PRODUCTION
ASSUMPTION MADE
USING SECONDARY

This publication has 3 references indexed in Scilit:

Threshold energy for atomic displacement in diamond
Physical Review B, 1976
Defects at low temperature in electron-irradiated diamond
Physical Review B, 1976
Optical and electrical effects of radiation damage in diamond
Discussions of the Faraday Society, 1961