Refractive Index of GaAs
- 1 April 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (4) , 1241-1242
- https://doi.org/10.1063/1.1713601
Abstract
The refractive index of GaAs, as measured by the prism refraction method, is reported here for photon energies from 0.7 eV up to the absorption limit set by the band gap, for temperatures of 300°, 187°, and 103°K. The results are compared with the previous data (obtained only for room temperature), and are used to show that the spacing of emission lines of GaAs lasers corresponds to that of the axial modes of a Fabry‐Perot resonator.This publication has 6 references indexed in Scilit:
- Oscillations in GaAs Spontaneous Emission in Fabry-Perot CavitiesPhysical Review Letters, 1963
- The effect of temperature on the properties of GaAs laserProceedings of the IEEE, 1963
- Optical Properties of SemiconductorsPhysical Review B, 1963
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Reflectivity and Optical Constants of Indium Arsenide, Indium Antimonide, and Gallium ArsenidePhysical Review B, 1961
- Determination of the Effective Ionic Charge of Gallium Arsenide from Direct Measurements of the Dielectric ConstantProceedings of the Physical Society, 1961