Analysis of the electronic properties of intermediate band materials as a function of impurity concentration
- 14 July 2005
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 72 (3) , 035213
- https://doi.org/10.1103/physrevb.72.035213
Abstract
An ab initio study using local spin density approximation to design possible candidates for intermediate band materials, which has a huge potential for becoming new devices in solar cells, is presented. The uniform doping of the GaP host semiconductor has been modelled by substituting a transition metal atom for each 216 atoms of the host semiconductor. The results show that the presence of the IB only occurs in some compounds. An analysis of the concentration effect shows that the intermediate band is preserved.Keywords
This publication has 29 references indexed in Scilit:
- Self-interaction effects in (Ga,Mn)As and (Ga,Mn)NChemical Physics, 2005
- Survey of intermediate band material candidatesSolid State Communications, 2005
- Different origins of the ferromagnetic order in (Ga,Mn)As and (Ga,Mn)Physical Review B, 2004
- First-principles investigation of the assumptions underlying model-Hamiltonian approaches to ferromagnetism ofimpurities in III-V semiconductorsPhysical Review B, 2004
- Diluted II-VI Oxide Semiconductors with Multiple Band GapsPhysical Review Letters, 2003
- coupling in zinc-blende semiconductorsPhysical Review B, 2003
- Analysis of metallic intermediate-band formation in photovoltaic materialsApplied Physics Letters, 2002
- Ab initioelectronic structure calculations for metallic intermediate band formation in photovoltaic materialsPhysical Review B, 2002
- A metallic intermediate band high efficiency solar cellProgress In Photovoltaics, 2001
- Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate LevelsPhysical Review Letters, 1997