High-power InGaAsP/GaAs 0.8-μm laser diodes and peculiarities of operational characteristics
- 22 August 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (8) , 1004-1005
- https://doi.org/10.1063/1.112206
Abstract
High‐power operation of 3 W in pulse mode, 750 mW in quasi‐continuous wave and 650 mW in continuous wave per uncoated facet from 100‐μm aperture has been demonstrated for 1‐mm‐long cavity InGaAsP/GaAs 808‐nm laser diodes prepared by low‐pressure metalorganic chemical vapor deposition. Threshold current density of 300 A/cm2, differential efficiency of 1.1 W/A, T0=155 °C, transverse beam divergence of 27°, and less than 2‐nm linewidth at 808 nm have been measured. No degradation has been observed after 1000 h of operation in a quasi‐continuous wave regime.Keywords
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