InP high mobility enhancement MISFETs using anodically grown double-layer gate insulator

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Abstract
High-mobility InP enhancement MISFETs are fabricated with the use of a novel double-layer gate insulator consisting of Al2O3 and native oxide, both grown anodically by a simple process. Applying a fairly high-temperature annealing (400°C), channel mobilities of 1500–3000 cm2/Vs and a large reduction of drain current drift are achieved.