A comparison of W-band monolithic resistive mixer architectures
- 25 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3, 1867-1870 vol.3
- https://doi.org/10.1109/mwsym.2002.1012227
Abstract
Three W-band resistive mixer architectures have been designed and their performance compared and contrasted. The mixers were fabricated using 0.1 /spl mu/m gate length InP HEMT technology for improved conversion loss performance compared to GaAs pHEMT. In particular, a state of art 94 GHz sub-harmonic resistive mixer is reported with 9.5 dB conversion loss when operated with a LO drive level of 2 dBm.Keywords
This publication has 2 references indexed in Scilit:
- Device considerations and modeling for the design of an InP-based MODFET millimeter-wave resistive mixer with superior conversion efficiencyIEEE Transactions on Microwave Theory and Techniques, 1995
- A GaAs MESFET Mixer with Very Low IntermodulationIEEE Transactions on Microwave Theory and Techniques, 1987