Electron spin relaxation in InGaAs/InP multiple-quantum wells
- 3 March 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (9) , 1131-1133
- https://doi.org/10.1063/1.118506
Abstract
The electron spin relaxation of InGaAs/InP multiple-quantum wells (MQW) is investigated using time-resolved polarization-dependent absorption measurement. The MQW has an excitonic absorption at 1.54 μm which is suitable for application in optical communications. A theoretical prediction assuming the D’yakonov-Perel’ interaction as the main relaxation mechanism gives a spin relaxation rate for the InGaAs quantum well over twice as high as that for the GaAs quantum well. The spin relaxation time measured at room temperature is 5.2 ps and found to be an order of magnitude faster than that of a GaAs quantum well.Keywords
This publication has 20 references indexed in Scilit:
- Quantum beats of electron Larmor precession in GaAs wellsPhysical Review Letters, 1994
- Highly Repetitive Picosecond Polarization Switching in Type-II AlGaAs/AlAs Multiple Quantum Well StructuresJapanese Journal of Applied Physics, 1993
- Observation of extremely long electron-spin-relaxation times in p-type δ-doped GaAs/As double heterostructuresPhysical Review B, 1993
- Time-resolved spin-polarization spectroscopy in GaAs/AlGaAs quantum wellsSurface Science, 1992
- Exciton spin dynamics in GaAs heterostructuresPhysical Review Letters, 1992
- Spin-flip scattering times in semiconductor quantum wellsSurface Science, 1992
- Femtosecond spectroscopy of carrier-spin relaxation in GaAs-As quantum wellsPhysical Review B, 1991
- Spin relaxation and thermalization of excitons in GaAs quantum wellsApplied Physics Letters, 1991
- Hole relaxation and luminescence polarization in doped and undoped quantum wellsPhysical Review Letters, 1990
- Direct observation of picosecond spin relaxation of excitons in GaAs/AlGaAs quantum wells using spin-dependent optical nonlinearityApplied Physics Letters, 1990