Transient simulation of the ERASE cycle of floating gate EEPROMs
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Self-consistent solution of the Poisson and Schrödinger equations in accumulated semiconductor-insulator interfacesJournal of Applied Physics, 1991
- Experimental transient analysis of the tunnel current in EEPROM cellsIEEE Transactions on Electron Devices, 1990
- Analysis and modeling of floating-gate EEPROM cellsIEEE Transactions on Electron Devices, 1986