Photoluminescence of negatively charged excitons in high magnetic fields
- 15 January 1999
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (4) , 2927-2931
- https://doi.org/10.1103/physrevb.59.2927
Abstract
We have studied the low-temperature photoluminescence of the two-dimensional electron gas in a single GaAs quantum well in magnetic fields up to 50 T over four orders of magnitude of illumination intensity. At the very highest illumination powers, where the recombination is excitonic at zero field, we find that the binding energy of both the singlet and triplet states of the negatively charged exciton increase monotonically with the applied field above 15 T. This contradicts recent calculations for but is in agreement with adapted calculations for the binding energy of negative-donor centers. At low-laser powers we observe a strong transfer of luminescence intensity from the singlet (ground) state to the triplet (excited) state as the temperature is reduced below 1 K. This is attributed to the spin polarization of the two-dimensional electron gas by the applied magnetic field.
Keywords
This publication has 22 references indexed in Scilit:
- Comparison of optical and transport measurements of electron densities in quantum wellsSemiconductor Science and Technology, 1996
- Negatively and positively charged excitons inquantum wellsPhysical Review B, 1996
- Spin-triplet negatively charged excitons in GaAs quantum wellsPhysical Review B, 1995
- Magneto-optical spectroscopy of positively charged excitons in GaAs quantum wellsPhysical Review B, 1995
- Influence of excess electrons and magnetic fields on Mott-Wannier excitons in GaAs quantum wellsAdvances in Physics, 1995
- Observation of negatively charged excitonsin semiconductor quantum wellsPhysical Review Letters, 1993
- Raman scattering verification of nonpersistent optical control of electron density in a heterojunctionApplied Physics Letters, 1990
- The observation of the fractional quantum Hall effect in a single (AlGa)As/GaAs/(AlGa)As quantum wellSemiconductor Science and Technology, 1990
- Theory of magneto-exciton binding energy in realistic quantum well structuresSolid State Communications, 1988
- Optical control of two-dimensional electron density in a single asymmetric quantum wellSurface Science, 1986