MOS Capacitor on Tellurium at Low Temperature
- 16 July 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 6 (1) , 91-97
- https://doi.org/10.1002/pssa.2210060111
Abstract
No abstract availableKeywords
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- SURFACE INVERSION AND ACCUMULATION OF ANODIZED InSbApplied Physics Letters, 1965
- The effects of oxide traps on the MOS capacitanceIEEE Transactions on Electron Devices, 1965
- Ring-dot impedance measurement, a simple technique for measuring inversion-layer conductance in semiconductorsIEEE Transactions on Electron Devices, 1965