Effects of implantant depth distribution on photoluminescence spectra in Be-implanted GaAs
- 15 December 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (12) , 845-847
- https://doi.org/10.1063/1.89571
Abstract
Photoluminescence spectra from ion‐implanted Be acceptors in GaAs have been studied as a function of wavelength and intensity of excitation light over the implant‐fluence range 3×1012 to 1×1015 cm−2. It is demonstrated that the nonuniform distributions of implantant concentration as a function of depth in the implanted layer produce a profiling effect which causes anomalous changes in photoluminescence line shapes and energy positions as a function of excitation intensity. These results imply photoexcited carrier diffusion lengths of much less than 1 μm in implanted and annealed layers in bulk GaAs.Keywords
This publication has 7 references indexed in Scilit:
- Optical characterization of deep O implants in GaAsJournal of Applied Physics, 1977
- Photoluminescence from Mg-implanted GaAsApplied Physics Letters, 1977
- Temperature dependence of photoluminescence from Be-implanted GaAsApplied Physics Letters, 1976
- Beryllium and sulfur ion-implanted profiles in gaasJournal of Electronic Materials, 1976
- Photoluminescence from Be-implanted GaAsApplied Physics Letters, 1975
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Radiative Lifetimes of Donor-Acceptor Pairs in-Type Gallium ArsenidePhysical Review B, 1969