Influence of the Purity of Source Precursors on the Electrical Properties of Pb(Zr, Ti)O3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition

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Abstract
Pb(Zr, Ti)O3 (PZT) thin films were prepared by metalorganic chemical vapor deposition (MOCVD) using two types of Pb precursors (tetra-ethyl lead: TEL) with different purities and the influence of the purity of TEL on the electrical properties of PZT thin films was investigated. While the difference in the purity of TEL did not affect the crystalline properties and surface morphology of PZT films, it influenced the electrical properties of PZT films. Relative dielectric constants and D-E hysteresis loops of PZT thin films were influenced slightly by the difference in the purity of TEL. PZT films grown using high purity TEL showed lower current densities and higher breakdown fields than those grown using low purity TEL. High source purity PZT films also had higher endurance against polarization fatigue than low source purity films. From these results, it was concluded that the purification of source materials led to the improvement of the electrical properties of ferroelectric thin films.

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