Cold and Low-Energy Ion Etching (COLLIE)
- 1 October 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (10R)
- https://doi.org/10.1143/jjap.28.2147
Abstract
It is shown that a new cold and low-energy ion etching system (COLLIE) is effective as a dry etching technique for fabrication of VLSI devices. In the COLLIE system, plasma instabilities are suppressed by an MHD stable magnetic field consisting of a solenoid coil and multicusp magnets. The ion temperature, which is strongly related to plasma instabilities, is lowered below 2 eV in this system. Etched profiles show a strong anisotropic feature without applying any external electrical bias. As small angular distribution of incident ions to a sample is realized, the microloading effect is greatly improved.Keywords
This publication has 1 reference indexed in Scilit:
- Reactive Ion Beam Etching Using a Broad Beam ECR Ion SourceJapanese Journal of Applied Physics, 1982