Design and characterisation of singly balancedsilicon carbide Schottky diode high-level mixer
- 4 January 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (1) , 54-55
- https://doi.org/10.1049/el:20010004
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applicationsProceedings of the IEEE, 1991