Optical anisotropy in dislocation-free silicon single crystals
- 7 November 2002
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 66 (1-4) , 327-332
- https://doi.org/10.1016/s0167-9317(02)00935-8
Abstract
No abstract availableKeywords
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- Relief of residual strains in gallium phosphide (100) wafers by crackingJournal of Applied Physics, 1993
- High-sensitivity computer-controlled infrared polariscopeReview of Scientific Instruments, 1993
- Optical Anisotropy of Silicon Single CrystalsPhysical Review B, 1971