Barrier-height determinations in thin-film tunnel junctions
- 1 August 1966
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 2 (8) , 304-305
- https://doi.org/10.1049/el:19660257
Abstract
Using the previously determined value of the internal electric field of tunnel diodes, the authors use the electric tunnel method for the evaluation of metal–dielectric barrier heights. Effective mass of electron and dielectric permittivity are constant for a range of thickness from 50 to 150 Å.Keywords
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