Saturation velocity of electrons in GaAs
- 1 June 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (6) , 584-586
- https://doi.org/10.1109/t-ed.1976.18456
Abstract
The saturation velocity of electrons in n-GaAs has been deduced from the v/E characteristic over a temperature range 130-400 K. The experimental values are compared with those predicted by a model assuming the velocity to be limited by intervalley scattering in the (100) valleys. The agreement between theory and experiment is very good if a value of 0.42n10 is used for the effective mass in the (100) valleys.Keywords
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