Microwave and far-infrared induced optically detected cyclotron resonance in epitaxial InP and GaAs
- 15 January 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (3) , 1504-1506
- https://doi.org/10.1103/physrevb.45.1504
Abstract
A comparative study of optically detected cyclotron resonance in the microwave and far-infrared frequency range in epitaxial InP and GaAs is presented. The electron cyclotron resonances and the inter-impurity 1s-to-2 transitions are observed in both high-mobility layers. Cyclotron-resonance-induced impact ionization of shallow donors and bound excitons is the basic mechanism for the observation by photoluminescence.
Keywords
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