Persistent photoconductivity in quantum well resonators
- 1 July 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (1) , 36-38
- https://doi.org/10.1063/1.96394
Abstract
We have made the first observation of persistent photoconductivity in resonant tunneling structures. The spectral dependence suggests that it arises from Si DX centers in the AlGaAs barriers, and calculations based on a simple model using this assumption agree well with the observations. This effect has been useful in investigating the charge distribution and electric fields near the heterojunction interface and in determining the barrier parameters. The model should help in the design and fabrication of optimized resonant tunneling devices.Keywords
This publication has 8 references indexed in Scilit:
- Quantum well oscillatorsApplied Physics Letters, 1984
- Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunctionSolid State Communications, 1984
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctionsJournal of Electronic Materials, 1983
- Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentrationApplied Physics Letters, 1981
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Long-lifetime photoconductivity effect in n-type GaAlAsApplied Physics Letters, 1977
- Tunneling in a finite superlatticeApplied Physics Letters, 1973