Effects of dopants in PZT films

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Abstract
Undoped and lanthanide (La and Nd) doped Pb(ZrxTi1-x)03, i.e., PZT, ferroelectric thin films were prepared by metallorganic decomposition (MOD) and spin-coating. The precursors for making the undoped PZT films were derived from lead acetate, zirconium n-propoxide, and titanium isopropoxide. In addition, lanthanum acetylacetonate and neodymium acetate were introduced into the precursor solution to accomplish the doping of the corresponding elements. Both undoped and doped PZT films were coated onto Pt/Ti/Si02/Si and single-crystal sapphire substrates to various thicknesses and annealed at a range of temperatures and times. The effects of lanthanide dopants in PZT films were studied with regard to microstructure, Curie temperatures, crystal distortion, optical properties, and electrical properties. The results indicate that the addition of La and Nd dopants tends to enhance perovskite phase formation and improve the packing densities and electrical properties of PZT films.