Practical reduction of dislocation density in SIMOX wafers
- 27 September 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (20) , 1647-1649
- https://doi.org/10.1049/el:19901055
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Low defect, high quality SIMOX material for bipolar device applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003