A model for steady-state photoconductivity in amorphous selenium
- 1 January 1984
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 45 (18) , 901-906
- https://doi.org/10.1051/jphyslet:019840045018094100
Abstract
The photoconductivity of amorphous selenium varies linearly with light intensity. This result cannot be interpreted by the classical mechanism of electron-hole pair generation followed by recombination through gap states. We assume that the incident photons create photoinduced defects whose structure is IVAP-like. The optical or thermal excitation of those defects yields the photoconductivity. In this model, the theoretical photocurrent is proportional to light intensity as observedKeywords
This publication has 13 references indexed in Scilit:
- Field effect in chalcogenide glassesPhysical Review B, 1981
- Recombination in amorphous semiconductorsPhysical Review B, 1978
- Non-radiative recombination in chalcogenide glassesSolid State Communications, 1977
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- States in the gap and recombination in amorphous semiconductorsPhilosophical Magazine, 1975
- Photogeneration of charge carriers in amorphous seleniumJournal of Physics and Chemistry of Solids, 1974
- Contribution to the study of the band structure of amorphous seleniumThin Solid Films, 1973
- Photoconduction en lumiére pulsée dans les couches minces de sélénium amorpheThin Solid Films, 1971
- Electronic States in Vitreous SeleniumPhysical Review B, 1965