Unipolar "Field-Effect" Transistor
- 1 August 1953
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 41 (8) , 970-979
- https://doi.org/10.1109/jrproc.1953.274285
Abstract
Unipolar "field-effect" transistors of a type suggested by W. Shockley have been constructed and tested. The idealized theory of Shockley has been extended to cover the actual geometries involved, and design nomographs are presented. It is found that these structures can be designed in such a way as to yield a negative resistance at the input terminals. The characteristics of several units are presented and analyzed. It is shown that these characteristics are in substantial agreement with the extended theory. Finally a speculative evaluation of the possible future applications of field effect transistors is made.Keywords
This publication has 3 references indexed in Scilit:
- Energy Distribution Function of Electrons in Pure HeliumPhysical Review B, 1954
- A Unipolar "Field-Effect" TransistorProceedings of the IRE, 1952
- Hot Electrons in Germanium and Ohm's LawBell System Technical Journal, 1951