Highly-oriented ZnO films by rf sputtering of hemispherical electrode system
- 1 April 1976
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (4) , 1726-1728
- https://doi.org/10.1063/1.322761
Abstract
Highly oriented ZnO films (c‐axis orientation) were fabricated on glass and fused‐quartz substrates by an rf‐sputtering system with a hemispherical electrode configuration. The sputtered films show a high longitudinal mode electromechanical coupling factor, kt=0.23–0.24. Initial results suggest that the hemispherical electrode configuration may provide improved reproducibility over planar sputtering systems in the preparation of ZnO films for acoustic device applications.This publication has 4 references indexed in Scilit:
- Excitation of Shear Mode Elastic Waves in Co-Sputtered ZnO FilmsIEEE Transactions on Sonics and Ultrasonics, 1974
- dc triode sputtered zinc oxide surface elastic wave transducersJournal of Applied Physics, 1973
- Variation ofc-Axis Orientation of ZnO Thin Films Deposited by DC Diode SputteringJapanese Journal of Applied Physics, 1973
- Structures and electrical properties of zinc oxide films prepared by low pressure sputtering systemThin Solid Films, 1971