10 GHz bandwidth, 20 dB gain low-noise direct-coupled amplifier ICs using Au/WSiN GaAs MESFET

24 May 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (11) , 699-700
https://doi.org/10.1049/el:19900456

Abstract

A low-noise direct-coupled amplifier IC with a bandwidth of 10GHZ was developed using a 0.4 μm gate-length Au/WSiN GaAs MESFET technology. The amplifier achieved a high gain of 20 dB and a minimum noise figure of 3.2 dB with a power consumption of 365 mW.

Keywords

365 MW
0.4 MICRON
3.2 DB
AU/WSIN GAAS MESFET
NOISE FIGURE
AU-WSIN-GAAS
10 GHZ
BANDWIDTH
GAIN
POWER CONSUMPTION
LOW-NOISE DIRECT-COUPLED AMPLIFIER ICS
20 DB
GATE-LENGTH
SEMICONDUCTORS

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