The Effects of Thermal and Transient Annealing on the Redistribution of Indium Implanted Silicon
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Migration of implanted indium in silicon as a function of thermal annealingApplied Physics Letters, 1983
- Rapid Thermal Annealing of Silicon Using an Ultrahigh Power Arc LampMRS Proceedings, 1983
- Transient Annealing of Ion-Implanted Silicon Using A Scanning IR Line SourceMRS Proceedings, 1982