The bloch-FET—A lateral surface superlattice device
- 1 December 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (12) , 381-383
- https://doi.org/10.1109/edl.1982.25607
Abstract
We describe a lateral surface superlattice device embedded in a MOSFET structure. Control of the inversion layer density and the two-dimensional quantized inversion layer itself allows optimizing the sub-band energy level spacing for a variety of applications. In particular, the narrow bands that arise in the inversion layer itself lead to the possibility of readily achieving negative differential conductivity in the transport properties of electrons through the device.Keywords
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