Steady-state transport in trap-dominated relaxation semiconductors
- 15 June 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 11 (12) , 4994-4998
- https://doi.org/10.1103/physrevb.11.4994
Abstract
Steady-state transport in trap-dominated relaxation semiconductors is discussed. It is suggested that under certain conditions such transport can be of a particular simple type. In cases where carrier lifetimes do not change significantly, the steady-state conductivity ratio remains essentially constant and a conductivity-locked mode of transport can occur. On the basis of this condition, a theory for the Hall effect, photoconductivity, the Dember effect, and the photomagnetoelectric effect is developed. Expressions for the Hall constant, the photocurrent, the Dember photovoltage, and the photomagnetoelectric short-circuit current and open-circuit photovoltage are obtained. When specialized, these expressions give a steady-state theory for these effects in the amorphous semiconductors.
Keywords
This publication has 11 references indexed in Scilit:
- Photoelectromagnetic effect in n-GaSeJournal of Applied Physics, 1974
- Transport and localized levels in amorphous binary chalcogenidesApplied Physics Letters, 1974
- Transient photovoltaic effects in anisotropic semiconductorsPhysical Review B, 1974
- Principles of electrical behavior of amorphous semiconductor alloysJournal of Non-Crystalline Solids, 1973
- Analysis of Photoconductivity in Amorphous ChalcogenidesJournal of Applied Physics, 1972
- Transport in Relaxation SemiconductorsPhysical Review B, 1972
- Electrical Pinch in Elastically Deformed GermaniumPhysica Status Solidi (b), 1966
- Current-Carrier Transport with Space Charge in SemiconductorsPhysical Review B, 1961
- Theory of the Photomagnetoelectric Effect in SemiconductorsPhysical Review B, 1956
- Zur Theorie der galvanomagnetischen Effekte bei gemischter LeitungZeitschrift für Naturforschung A, 1951