A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
- 15 June 2004
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 457-460, 1173-1176
- https://doi.org/10.4028/www.scientific.net/msf.457-460.1173
Abstract
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