Revised model of the native deep-level defects in liquid-phase epitaxial GaAs
- 1 October 1986
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 1 (4) , 275-279
- https://doi.org/10.1088/0268-1242/1/4/006
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Electronic properties of native deep-level defects in liquid-phase epitaxial GaAsJournal of Physics C: Solid State Physics, 1984
- Evidence that the gold donor and acceptor in silicon are two levels of the same defectApplied Physics Letters, 1983
- Deep-level optical spectroscopy in GaAsPhysical Review B, 1981
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974